ISO 17560:2014
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ISO 17560:2014
65114

Abstract  Preview

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.


General information 

  •  :  Published
     : 2014-09
  •  : 2
     : 10
  •  : ISO/TC 201/SC 6 Secondary ion mass spectrometry
  •  :
    71.040.40 Chemical analysis

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