Abstract Preview
This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
General information
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Status: PublishedPublication date: 2018-11
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Edition: 2Number of pages: 17
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- ICS :
- 71.040.40 Chemical analysis
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| Format | Language | |
|---|---|---|
| std 1 88 | PDF + ePub | |
| std 2 88 | Paper |
- CHF88
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