ISO 14706:2014
p
ISO 14706:2014
61870

Abstract  Preview

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.


General information 

  •  :  Published
     : 2014-08
  •  : 2
     : 25
  •  : ISO/TC 201 Surface chemical analysis
  •  :
    71.040.40 Chemical analysis

Buy this standard

en
Format Language
std 1 118 PDF + ePub
std 2 118 Paper
  • CHF118

Got a question?

Check out our FAQs

Customer care
+41 22 749 08 88

Opening hours:
Monday to Friday - 09:00-12:00, 14:00-17:00 (UTC+1)

Keep up to date with ISO

Sign up to our newsletter for the latest news, views and product information.