ISO/DIS 5618-2

Status : Under development

	Format	Language
std 1 61	PDF
std 2 61	Paper

CHF61

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Abstract

This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films. It is applicable to the defects specified in AWI 5618-1 from among the defects cropped out on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate. It is applicable to defects with an etch pit density of 7 × 10⁷ cm^-2 or lower.

General information

Status
: Under development

You can help develop this draft international standard by contacting your national member

Stage
: DIS ballot initiated: 12 weeks [40.20]
Edition
: 1

Number of pages
: 26
Technical Committee :
ISO/TC 206

ICS :
81.060.30
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