This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films. It is applicable to the defects specified in AWI 5618-1 from among the defects cropped out on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate. It is applicable to defects with an etch pit density of 7 × 107 cm-2 or lower.
Status: Under developmentYou can help develop this draft international standard by contacting your national memberStage: DIS ballot initiated: 12 weeks [40.20]
Edition: 1Number of pages: 26
Technical Committee :ISO/TC 206ICS :81.060.30
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