Abstract Preview

This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10−3 ohm · cm to 10−2 ohm · cm, applicable to power electronic devices.

This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 1016 cm−3 to 1018 cm−3. Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.


General information

  • Status :  Published
    Publication date : 2021-02
  • Edition : 1
    Number of pages : 27
  • :
    ISO/TC 206
    Fine ceramics
  • 81.060.30
    Advanced ceramics

Buy this standard

Format Language
PDF + ePub
Paper
  • CHF138

Got a question?

Check out our FAQs

Customer care
+41 22 749 08 88

Opening hours:
Monday to Friday - 09:00-12:00, 14:00-17:00 (UTC+1)

Keep up to date with ISO

Sign up to our newsletter for the latest news, views and product information.