ISO 12406:2010
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ISO 12406:2010
51418

Abstract  Preview

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.


General information 

  •  :  Published
     : 2010-11
  •  : 1
     : 13
  •  : ISO/TC 201/SC 6 Secondary ion mass spectrometry
  •  :
    71.040.40 Chemical analysis

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