ISO 23812:2009
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ISO 23812:2009
41867

Abstract  Preview

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.


General information 

  •  :  Published
     : 2009-04
  •  : 1
     : 19
  •  : ISO/TC 201/SC 6 Secondary ion mass spectrometry
  •  :
    71.040.40 Chemical analysis

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