ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Status: PublishedPublication date: 2009-04
Edition: 1Number of pages: 19
Technical Committee: ISO/TC 201/SC 6 Secondary ion mass spectrometry
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