ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.

General information

  • Status :  Withdrawn
    Publication date : 2002-07
  • Edition : 1
    Number of pages : 10
  • :
    ISO/TC 201/SC 6
    Secondary ion mass spectrometry
  • 71.040.40
    Chemical analysis

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