• Фильтр:

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Стандарт и/или проект находящийся в компетенции ISO/TC 201/SC 4 Секретариата Этап ICS
ISO 14606:2000
Surface chemical analysis — Sputter depth profiling — Optimization using layered systems as reference materials
95.99
ISO 14606:2015
Surface chemical analysis — Sputter depth profiling — Optimization using layered systems as reference materials
60.60
ISO/TR 15969:2001
Surface chemical analysis — Depth profiling — Measurement of sputtered depth
90.92
ISO/AWI TR 15969
Surface chemical analysis — Depth profiling — Measurement of sputtered depth
10.99
ISO 16531:2013
Surface chemical analysis — Depth profiling — Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
90.92
ISO/FDIS 16531
Surface chemical analysis — Depth profiling — Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
50.20
ISO 17109:2015
Surface chemical analysis — Depth profiling — Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films
90.20
ISO/TR 22335:2007
Surface chemical analysis — Depth profiling — Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer
90.93
ISO/WD 23170
Surface Chemical Analysis --- Depth Profiling — Non-destructive depth profiling of nanoscale heavy metal oxide thin films on Si substrates with medium energy ion scattering
20.00

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